Recharging behavior of nitrogen-centers in ZnO

Optimum photoluminescence excitation and recharging cycle of single nitrogen-vacancy centers in ultrapure diamond.

Important features in the spectral and temporal photoluminescence excitation of single nitrogen-vacancy (NV) centers in diamond are reported at conditions relevant for quantum applications. Bidirectional switching occurs between the neutral (NV(0)) and negatively charged (NV(-)) states. Luminescence of NV(-) is most efficiently triggered at a wavelength of 575 nm which ensures optimum excitatio...

Efficient nitrogen incorporation in ZnO nanowires

One-dimensional ZnO nanowires (NWs) are a promising materials system for a variety of applications. Utilization of ZnO, however, requires a good understanding and control of material properties that are largely affected by intrinsic defects and contaminants. In this work we provide experimental evidence for unintentional incorporation of nitrogen in ZnO NWs grown by rapid thermal chemical vapor...

Transient surface photovoltage in n- and p-GaN as probed by x-ray photoelectron spectroscopy

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Title Emission bands of nitrogen-implantation induced luminescent centers in ZnO crystals: experiment and theory

ZnO p–n Homojunction Random Laser Diode Based on Nitrogen-Doped p-type Nanowires

An electrically pumped ZnO homojunction random laser diode based on nitrogen-doped p-type ZnO nanowires is reported. Nitrogen-doped ZnO nanowires are grown on a ZnO thin fi lm on a silicon substrate by chemical vapor deposition without using any metal catalyst. The p-type behavior is studied by output characteristics and transfer characteristic of the nanowire back-gated fi eld-effect transisto...